Light trapping abilities of silicon thin films measured by Raman spectroscopy

0386621 - FZÚ 2013 RIV DE eng C - Konferenční příspěvek (zahraniční konf.)
Ledinský, Martin - Hakl, M. - Ondič, Lukáš - Ganzerová, K. - Vetushka, Aliaksi - Fejfar, Antonín - Kočka, Jan
Light trapping abilities of silicon thin films measured by Raman spectroscopy.
Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG, 2012 - (Nowak, S.), s. 2431-2433. ISBN 3-936338-28-0.
[European Photovoltaic Solar Energy Conference and Exhibition (PVSEC) /17./. Frankfurt (DE), 24.09.2012-28.09.2012]
Grant CEP: GA MŠMT 7E10061; GA MŠMT(CZ) LM2011026; GA MPO FR-TI2/736
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: light trapping * polycrystalline silicon (Si) * thin film solar cell * Raman spectoscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Raman spectroscopy is used as a tool for measuring the light trapping abilities of thin crystalline silicon films for photovoltaic applications. Comparison of samples with different scattering characteristic is reported and the significant difference in the absolute Raman intensities is explained by light trapping effects. Raman spectroscopy is proposed as a promising tool for in-line characterization of silicon thin films during fabrication of solar cell modules.
Trvalý link: http://hdl.handle.net/11104/0215916