Mapping of dopants in silicon by electron injection

0386449 - ÚPT 2013 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Hovorka, Miloš - Konvalina, Ivo - Frank, Luděk - Mikulík, P.
Mapping of dopants in silicon by electron injection.
Physic and Nanoscale. (Proceedings of the 10th IUVSTA International Summer School ). Praha: IOP AS CR, 2012 - (Fejfar, A.; Vetushka, A.). ISBN 978-80-260-0619-0.
[Physics at Nanoscale. IUVSTA International Summer School /10./. Devět skal (CZ), 30.05.2012-04.06.2012]
Institucionální podpora: RVO:68081731
Klíčová slova: mapping of dopants in sillicon * electron injection
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Dopants in sillicon based structures locally modifty the secondary electron emission, revealing in this way their distribution over the sample. For probing the doped structures usually the elctron beam is used at energies around 1keV. However, the very low landing energy range has proven itself an effecient tool for mapping dopant in semiconductors.
Trvalý link: http://hdl.handle.net/11104/0215756