Proximity effect simulation for variable shape e-beam writer

0386400 - ÚPT 2013 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Kolařík, Vladimír - Matějka, Milan - Urbánek, Michal - Král, Stanislav - Krátký, Stanislav - Mikšík, P. - Vašina, J.
Proximity effect simulation for variable shape e-beam writer.
Proceedings of the 13th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno: Institute of Scientific Instruments AS CR, v.v.i, 2012 - (Mika, F.), s. 75-76. ISBN 978-80-87441-07-7.
[International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /13./. Skalský dvůr (CZ), 25.06.2012-29.06.2012]
Grant CEP: GA MŠMT ED0017/01/01; GA MPO FR-TI1/576
Institucionální podpora: RVO:68081731
Klíčová slova: electron scattering effects * e-beam writer * computer simulation
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Electron Beam Writer (EBW) is a lithographic tool allowing generation of patterns in high resolution. The writing is carried out into a layer of a sensitive material (resist), which is deposited on the substrate surface (e.g. silicon). The resolution of the EBW is limited not only by the beam spot size, but also by the electron scattering effects (forward scattering, backscattering). Thus, even if the beam spot size on the resist surface is very small, due to electron scattering effect in the resist, the exposed area is significantly broader than the original beam spot size [1, 2].
Trvalý link: http://hdl.handle.net/11104/0215699