Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation

0386379 - FZÚ 2013 RIV NL eng J - Článek v odborném periodiku
Holovský, Jakub - Schmid, M. - Stückelberger, M. - Despeisse, M. - Ballif, C. - Poruba, Aleš - Vaněček, Milan
Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation.
Journal of Non-Crystalline Solids. Roč. 358, č. 17 (2012), s. 2035-2038. ISSN 0022-3093. E-ISSN 1873-4812.
[International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) /24./. Nara, 21.08.2011-26.08.2011]
Grant CEP: GA MŠMT(CZ) 7E09057
GRANT EU: European Commission(XE) 214134 - N2P
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: amorphous silicon * photocurrent spectroscopy * surface states
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.597, rok: 2012
http://www.sciencedirect.com/science/article/pii/S0022309311007411

The time evolution of surface defect density and width of space charge region in thin layer of amorphous silicon is observed experimentally by Fourier transform photocurrent spectroscopy. This work review the assumption that photocurrent is insensitive to surface defects for samples thinner that 1500nm. We show that correct evaluation based on simple optical model comprising layers representing surface defects and layers representing space charge region with reduced collection allows obtaining same results as from photothermal deflection spectroscopy. Our main approach is the comparison of photocurrent or photothermal deflection spectra measured in absorptance/transmittance mode from layer and substrate side of the thin film.
Trvalý link: http://hdl.handle.net/11104/0215678