Raman spectroscopy of isotopically labeled two-layer graphene

0384802 - ÚFCH JH 2013 RIV DE eng J - Článek v odborném periodiku
Kalbáč, Martin - Kong, J. - Kavan, Ladislav - Dresselhaus, M. S.
Raman spectroscopy of isotopically labeled two-layer graphene.
Physica Status Solidi B. Roč. 249, č. 12 (2012), s. 2500-2502. ISSN 0370-1972. E-ISSN 1521-3951
Grant CEP: GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT ME09060; GA ČR GAP204/10/1677; GA ČR GBP208/12/G016; GA ČR(CZ) GAP208/12/1062
Institucionální podpora: RVO:61388955
Klíčová slova: electrochemical doping * isotope labeling * graphene
Kód oboru RIV: CG - Elektrochemie
Impakt faktor: 1.489, rok: 2012

A detailed understanding of graphene properties both in its neutral and doped states is an important prerequisite for applications of this new material in electronic devices. We used electrochemical doping to study the influence of charge on isotopically labeled two-layer graphene. No change of the G mode intensity was observed at electrode potentials between −1.5 and 1 V. At high positive electrode potentials (>1 V) we observed enhancement of the G mode intensity due to partial removal of interfering resonant transitions. Hence, we confirmed that in case of absence of the enhancement due to a specific orientation between the two layers the Raman spectroelectrochemistry of non-stacked two-layer graphene mimics that of one-layer graphene.
Trvalý link: http://hdl.handle.net/11104/0214324