Electro- and photoluminescence of InAs/GaAs quantum dot structures

0383779 - FZÚ 2013 RIV GB eng J - Článek v odborném periodiku
Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Vyskočil, Jan
Electro- and photoluminescence of InAs/GaAs quantum dot structures.
Journal of Physics: Conference Series. Roč. 245, č. 1 (2010), s. 1-5. ISSN 1742-6588. E-ISSN 1742-6596.
[Conference on Quantum Dots 2010. Nottingham, 26.08.2010-30.08.2010]
Grant CEP: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: electroluminescence * photoluminescence * spectroscopy * InAs QDs
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We study the effect of composition of the low-temperature grown QD capping layer on EL and PL from self assembled InAs QDs grown by MOVPE. QD structures were prepared by low-pressure MOVPE in a reflectance anisotropy spectroscopy LayTec equipped AIXTRON 200 machine, using Stranski–Krastanow growth mode on n-type Si doped and on semi-insulating GaAs substrates. To enable EL characterization, QD structures grown on the conducting substrate were embedded into a p-i-n structure. We focused on the shift of the emission maximum towards longer wavelengths by using InGaAs strain reducing layer (SRL). Three concentrations of In were used 0%, 13% and 23%. The shift of the emission maximum towards the low energy side of spectrum was observed only for the p-i-n sample with 13% In in SRL, while further increasing of In content to 23% caused the blue shift of the position of both PL and EL maxima.
Trvalý link: http://hdl.handle.net/11104/0213617