Quantum Dots - A Variety of New Applications

0377124 - FZÚ 2013 RIV HR eng M - Část monografie knihy
Hospodková, Alice
Capping of InAs/GaAs quantum dots for GaAs based lasers.
Quantum Dots - A Variety of New Applications. Rijeka: InTech, 2012 - (Al-Ahmadi, A.), s. 27-46. ISBN 978-953-51-0483-4
Grant CEP: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: metalorganic vapour phase epitaxy * quantum dots * quantum dot laser * electroluminescent diode * electroluminescence
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Growth conditions of InAs/GaAs QD layers determine such parameters as density, homogeneity and original size of QDs. The aim of the chapter is to elucidate the processes during QD capping by reflectance anisotropy spectroscopy (RAS) in situ measurements and to discuss the influence of the capping layer composition and its growth parameters (like thickness, growth temperature and growth rate) on the structural and optical properties of InAs/GaAs quantum dots. Three most common types of capping layers are studied: simple GaAs capping layer, InGaAs or GaAsSb strain reducing layers (SRL). Advantages and disadvantages of both types of SRLs will be discussed. Different types of In flushing method during the growth of capping layers and their importance are discussed at the end of the chapter.
Trvalý link: http://hdl.handle.net/11104/0209370