Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers

0376516 - ÚFM 2013 RIV NL eng J - Článek v odborném periodiku
Meduňa, M. - Caha, O. - Buršík, Jiří
Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers.
Journal of Crystal Growth. Roč. 348, č. 1 (2012), s. 53-59. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA ČR(CZ) GA202/09/1013
Výzkumný záměr: CEZ:AV0Z20410507
Klíčová slova: impurities * point defects * precipitates
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.552, rok: 2012

We have investigated Czochralski grown low boron doped silicon wafers after oxygen precipitation using high temperature preannealing. Wafers originating from the part of the silicon ingot close to head and close to tail were used for the experiments representing different temperature history of the wafers. The loss of interstitial oxygen, precipitate morphology and stoichiometry at various stages of precipitation were determined by infrared absorption spectroscopy at liquid nitrogen and at room temperature. The impact of a high temperature preannealing at various temperatures on the parameters of precipitates including also their concentration determined from chemical etching was observed during the growth of oxygen precipitates. The obtained results were compared with transmission electron microscopy.
Trvalý link: http://hdl.handle.net/11104/0208895