Formation of CuIn.sub.1−x./sub.Al.sub.x./sub.Se.sub.2./sub. thin films studied by Raman scattering

0375581 - FZÚ 2012 RIV CH eng J - Článek v odborném periodiku
Olejníček, Jiří - Kamler, C.A. - Darveau, S.A. - Exstrom, C.L. - Slaymaker, L.E. - Vandeventer, A.R. - Ianno, N.J. - Soukup, R. J.
Formation of CuIn_1−xAl_xSe₂ thin films studied by Raman scattering.
Thin Solid Films. Roč. 519, č. 16 (2011), s. 5329-5334. ISSN 0040-6090. E-ISSN 1879-2731
Výzkumný záměr: CEZ:AV0Z10100522
Klíčová slova: copper aluminium indium selenide * chalcopyrites * Raman spectroscopy * solar cells * X-ray diffraction
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.890, rok: 2011

CuIn1−xAlxSe2 (CIAS) thin films (x=0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu―In―Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50–500 cm−1 with resolution of 0.3 cm−1. Sequential formation of InxSey, Cu2−xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1−xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm−1 to 186 cm−1.
Trvalý link: http://hdl.handle.net/11104/0208194