CuIn.sub.1−x./sub.Al.sub.x./sub.S.sub.2./sub. thin films prepared by sulfurization of metallic precursors

0375572 - FZÚ 2012 RIV NL eng J - Článek v odborném periodiku
Olejníček, Jiří - Flannery, L.E. - Darveau, S.A. - Exstrom, C.L. - Kment, Štěpán - Ianno, N.J. - Soukup, R. J.
CuIn_1−xAl_xS₂ thin films prepared by sulfurization of metallic precursors.
Journal of Alloys and Compounds. Roč. 509, č. 41 (2011), s. 10020-10024. ISSN 0925-8388. E-ISSN 1873-4669
Výzkumný záměr: CEZ:AV0Z10100522
Klíčová slova: CuIn_1−xAl_xS₂ * CIAS * chalcopyrites * Raman spectroscopy * solar cells
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.289, rok: 2011
http://dx.doi.org/10.1016/j.jallcom.2011.08.016

CuIn1−xAlxS2 thin films (x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu–In–Al precursors. All samples were sulfurized in a graphite container for 90 min at 650 °C in a 150 kPa Ar + S atmosphere. Final films were studied via X-ray diffraction (XRD), scanning electron microscopy (SEM) and micro-Raman spectroscopy. It was found that all samples were polycrystalline in nature and their lattice parameters varied slightly nonlinearly from {a = 5.49 Å, c = 11.02 Å} for CuInS2 to {a = 5.30 Å, c = 10.36 Å} for CuAlS2. No unwanted phases such as Cu2−xS or others were observed. Raman were recorded at a room temperature and the most intensive and dominant A1 phonon frequency varied nonlinearly from 294 cm−1 (CuInS2) to 314 cm−1 (CuAlS2).
Trvalý link: http://hdl.handle.net/11104/0208187