Mechanical and electrical properties of microcrystalline silicon thin films

0375338 - FZÚ 2012 CZ eng D - Dizertace
Vetushka, Aliaksi
Mechanical and electrical properties of microcrystalline silicon thin films.
Matematicko-fyzikální fakulta UK. Obhájeno: Matematicko-fyzikální fakulta UK. 29.03.2011. - Praha: Univerzita Karlova, 2010. 86 s.
Grant CEP: GA MŠMT(CZ) LC06040; GA MŠMT(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠMT LC510
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: conductive atomic force microscopy * raman micro-spectroscopy * microcrystalline silicon
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
http://dl.dropbox.com/u/26071625/AV_PhD.pdf

One of the main aims of this work is the study of the structure and mechanical properties of the mixed phase silicon thin films of various thicknesses and structures. We introduced an original setup for the stress creation in which the silicon films were deposited on the AFM cantilevers and then bent by a micromanipulator to introduce an extrinsic stress. We demonstrated that the positions of the Raman peaks changed linearly with the applied stress both for amorphous and microcrystalline silicon and we were able to compare the same film in stressed and relaxed states. Another aim of this work was the microscopic study of the charge transport in hydrogenated microcrystalline silicon with nanometer resolution. The final part of the thesis covers the results of the conductive atomic force microscopy study.
Trvalý link: http://hdl.handle.net/11104/0208019