Microscopic measurements of polycrystalline silicon thin films on glass

0375317 - FZÚ 2012 RIV DE eng C - Konferenční příspěvek (zahraniční konf.)
Fejfar, Antonín - Vetushka, Aliaksi - Ledinský, Martin - Kočka, Jan
Microscopic measurements of polycrystalline silicon thin films on glass.
Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition. München: WIP München, 2011, s. 2788-2790. ISBN 3-936338-27-2.
[European Photovoltaic Solar Energy Conference and Exhibition /26./. Hamburg (DE), 05.09.2011-09.09.2011]
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510; GA AV ČR(CZ) IAA100100902
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: Si-films * polycrystalline Si * microcrystalline Si
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Microscopic study of charge transport collection in silicon thin films can be studied with resolution down to ~10 nm, which allows study of individual crystalline grains in microcrystalline silicon or individual crystallites separated by grain boundaries within the polycrystalline silicon grains on glass. We have developed two complementary approaches: conductive atomic force microscopy (C-AFM) and measurements with two probes navigated by a scanning electron microscope. We have also proposed and tested a novel procedure for measurements of the same spot after repeated mounting. The procedure uses simple nanoindentation marks which can be easily localized with high precision in various microscopes used (optical, scanning electron microscope, CAFM). This enables measurements of the same spot on a sample before and after technological steps (e.g. hydrogenation or deposition) and thus an investigation of microscopic effects of these treatments.
Trvalý link: http://hdl.handle.net/11104/0208002