Photothermal and photocurrent spectroscopy of wide band gap nanocrystalline semiconductors

0375053 - FZÚ 2012 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Remeš, Zdeněk - Babchenko, Oleg - Neykova, Neda - Varga, Marián
Photothermal and photocurrent spectroscopy of wide band gap nanocrystalline semiconductors.
NANOCON 2011. Conference proceedings. Ostrava: Tanger Ltd, 2011, s. 719-725. ISBN 978-80-87294-27-7.
[NANOCON 2011. International Conference /3./. Brno (CZ), 21.09.2011-23.09.2011]
Grant CEP: GA ČR(CZ) GAP108/11/0937; GA TA ČR TA01020972; GA MŠMT(CZ) MEB0810081
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: wide band gap semiconductors * optical spectroscopy * nanocrystalline materials
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Optical spectroscopy belongs to the most important methods applied to characterize thin films. Photothermal deflection spectroscopy (PDS) as well as the dual beam photocurrent (DBP) spectroscopy in near ultraviolet (200-400 nm), visible (400-700 nm) and near infrared regions (700-2000 nm) are particularly useful for study of the wide band gap semiconductors deposited as thin layers on glass substrates. In our laboratory we focus on optically transparent thin films such as nanocrystalline diamond (NCD) or ZnO nanostructures with size too small to be visualized in optical microscope and the optical absorption edge in the ultraviolet region. In this contribution we summarize how to evaluate the optical absorption edge and the defects in the band gap of these wide band gap nanocrystalline semiconductors.
Trvalý link: http://hdl.handle.net/11104/0207820