Characteristics of nanocrystalline diamond SGFETs under cell culture conditions

0375023 - FZÚ 2012 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Krátká, Marie - Kromka, Alexander - Rezek, Bohuslav - Brož, A. - Kalbáčová, M.
Characteristics of nanocrystalline diamond SGFETs under cell culture conditions.
WDS'11 Proceedings of Contributed Papers: Part III: Physics. Praha: MATFYZPRESS, 2011 - (Šafránková, J.; Pavlů, J.), s. 160-165. ISBN 978-80-7378-186-6.
[WDS 2011 - Annual Conference of Doctoral Students /20./. Prague (CZ), 31.05.2011-03.06.2011]
Grant CEP: GA ČR GD202/09/H041; GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510; GA AV ČR(CZ) IAAX00100902; GA ČR GAP204/10/0212
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: SGFET * proteins * cells * nanocrystalline diamond
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Characterization of electronic properties of protein diamond interface by using microscopic (20 μm) solution-gated field-effect transistors (SGFET) based on H-terminated nanocrystalline diamond films (NCD) on glass. We show that NCD films with grain sizes down to 80 nm and thickness down to 100 nm are operational as SGFETs.
Trvalý link: http://hdl.handle.net/11104/0207799