Study of Schottky Barriers Prepared by Deposition of Colloidal Graphite and Pt Nanoparticles on InP and GaN

0374734 - ÚFE 2012 RIV US eng C - Konferenční příspěvek (zahraniční konf.)
Žďánský, Karel - Yatskiv, Roman
Study of Schottky Barriers Prepared by Deposition of Colloidal Graphite and Pt Nanoparticles on InP and GaN.
INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON. Vol. 13. NEW YORK: IEEE, 2011 - (Jaworski, M.; Marciniak, M.), C651-C654. ISBN 978-1-4577-0880-0.
[13th International Conference on Transparent Optical Networks (ICTON). Stockholm (SE), 26.06.2011-30.06.2011]
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Schottky barriers were prepared by deposition of colloidal graphite on polished surfaces of InP or GaN single crystals. sparsely covered with Pt nanoparticles deposited electrophoretically. Diodes with the Schottky barriers were studied by current voltage characteristics. The diodes showed high rectification ratio and high Schottky barrier heights indicating negligible Fermi level pinning. By testing with gas consisting of 0.1 % of hydrogen and rest nitrogen, the current showed high sensitivity to hydrogen.
Trvalý link: http://hdl.handle.net/11104/0207578