Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures

0374724 - ÚFE 2013 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Nohavica, Dušan - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří
Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures.
NANOCON 2011, Conference Proceedings, 3 rd International Conference. Brno: TANGER Ltd., Ostrava, 2011, s. 150-154. ISBN 978-80-87294-27-7.
[NANOCON 2011. International Conference /3./. Brno (CZ), 21.09.2011-23.09.2011]
Grant CEP: GA ČR GAP108/10/0253
Výzkumný záměr: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Klíčová slova: porous semiconductors * heterotransitions * electrochemical etching of metals
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

We investigate the concept of epitaxial growth on porous substrates Both crystalographically oriented and current line oriented pore networks in InP and GaAs were created by electrochemical dissolution. Heat treatment of InP pores at 650 ºC and GaAs pores at 700-850ºC converted them into microcavities. The capability of improved structural quality homo- and hetero-epitaxially overgrown films is demonstrated on InAs and GaInAs layers with a different composition grown on porous GaAs substrates
Trvalý link: http://hdl.handle.net/11104/0216241