Počet záznamů: 1
Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing
- 1.0374578 - ÚFE 2013 RIV CZ eng C - Konferenční příspěvek (zahraniční konf.)
Žďánský, Karel - Muller, M. - Černohorský, Ondřej - Yatskiv, Roman
Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing.
NANOCON 2011, Conference Proceedings, 3 rd International Conference. Brno: TANGER Ltd., Ostrava, 2011, s. 51-57. ISBN 978-80-87294-27-7.
[NANOCON 2011, 3 rd International Conference. Brno (CZ), 21.09.2011-23.09.2011]
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
High Schottky barriers have been achieved by applying colloidal graphite on n-type InP and on n-type GaN semiconductor crystal wafers. The barrier heights were shown to be close to Schottky-Mott limit ad thermionic emission theory. Porous properties of the graphite Schottky contacts were demonstrated by scanning electron microscopy.
Trvalý link: http://hdl.handle.net/11104/0216248
Počet záznamů: 1