Electrophoretic Deposition: Fundamentals and Applications IV

0374462 - ÚFE 2013 RIV CH eng M - Část monografie knihy
Žďánský, Karel - Yatskiv, Roman - Černohorský, Ondřej - Piksová, K.
EPD of Reverse Micelle Pd and Pt Nanoparticles onto InP and GaN for High-Response Hydrogen Sensors.
Electrophoretic Deposition: Fundamentals and Applications IV. Durnten-Zurich: Trans Tech Publications inc., Publishers in Science and Engineering, 2012 - (Boccaccini, A.; Van der Biest, O.; Clasen, R.; Dickerson, J.), s. 169-174. Key Engineering Materials, 507. ISBN 978-3-03785-379-5
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The Pd, Pt and Pd/Pt nanoparticles (NPs) were electrophoretically EPD deposited onto InP and GaN crystal. Porous Schottky diodes were made by printing colloid graphite on the NPs deposited surface. Diodes showed current-voltage curves of excellent rectification and barrier height values close to Schottky-Mott limit, with low Fermi level pinning. They were measured in the gas-flow of H2/N2 blend with H2 from 1000 to 1 ppm. Current change ratio 106 and 10 were achieved with 1000 and 1 ppm H2/N2, respectively.
Trvalý link: http://hdl.handle.net/11104/0216254