Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth

0373608 - FZÚ 2012 RIV US eng J - Článek v odborném periodiku
Verveniotis, Elisseos - Rezek, Bohuslav - Šípek, Emil - Stuchlík, Jiří - Ledinský, Martin - Kočka, Jan
Impact of AFM-induced nano-pits in a-Si:H films on silicon crystal growth.
Nanoscale Research Letters. Roč. 6, Feb. (2011), 145/1-145/6. ISSN 1931-7573. E-ISSN 1556-276X
Grant CEP: GA ČR GD202/09/H041; GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: field-enhanced metal-induced solid phase crystallization (FE-MISPC) * silicon nanocrystals * material conductivity
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.726, rok: 2011
http://www.nanoscalereslett.com/content/6/1/145

Conductive tips in atomic force microscopy (AFM) can be used to localize field-enhanced metal-induced solid-phase crystallization (FE-MISPC) of amorphous silicon (a-Si:H) at room temperature down to nanoscale dimensions. In this article, the authors show that such local modifications can be used to selectively induce further localized growth of silicon nanocrystals. First, a-Si:H films by plasma-enhanced chemical vapor deposition on nickel/glass substrates are prepared. After the FE-MISPC process, yielding both conductive and non-conductive nano-pits in the films, the second silicon layer at the boundary condition of amorphous and microcrystalline growth is deposited.
Trvalý link: http://hdl.handle.net/11104/0206690