Effect of Fe doping on transmission and photoluminescence properties of semiinsulating HVPE GaN:Fe bulk like material

0373032 - FZÚ 2012 US eng A - Abstrakt
Gladkov, Petar - Humlíček, J. - Hulicius, Eduard - Šimeček, Tomislav - Paskova, T. - Evans, K.
Effect of Fe doping on transmission and photoluminescence properties of semiinsulating HVPE GaN:Fe bulk like material.
The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy. 2009 Abstract Book. Warren: American Association for Crystal Growth, 2009. s. 151. ISBN N.
[US Biennial Workshop on Organometallic Vapor Phase Epitaxy /14./. 09.08.2009-14.08.2009, Lake Geneva, Wisconsin]
Grant ostatní: MDA(US) HQ0147-09-C-0005
Výzkumný záměr: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Klíčová slova: GaN templates * HVPE
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The growth of bulk Fe-doped GaN by HVPE technique enables the preparation of semi-insulating GaN templates as substrates for the growth of homoepitaxial structures. Further improvement of the semi-insulating GaN template properties requires further characterization of the bulk Fe-doped GaN. Results of photoluminescence (PL), at room and low temperatures as well as optical transmission characterization of bulk Fe doped GaN in a wide range of Fe doping is presented.
Trvalý link: http://hdl.handle.net/11104/0006871