Mapping of dopants in silicon by injection of electrons

0371449 - ÚPT 2012 RIV PL eng A - Abstrakt
Mikulík, P. - Hovorka, Miloš - Konvalina, Ivo - Frank, Luděk
Mapping of dopants in silicon by injection of electrons.
28th European Conference on Surface Science. Wroclaw: University of Wroclaw, 2011. s. 188-189.
[European Conference on Surface Science /28./. 28.08.2011-02.09.2011, Wroclaw]
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: dopant * silicon * scanning electron microscopy
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability has been verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.
Trvalý link: http://hdl.handle.net/11104/0204960