Počet záznamů: 1  

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

  1. 1.
    0371379 - FZÚ 2012 RIV NL eng J - Článek v odborném periodiku
    Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures.
    Journal of Crystal Growth. Roč. 315, č. 1 (2011), 110-113. ISSN 0022-0248. E-ISSN 1873-5002
    Grant CEP: GA ČR GAP102/10/1201; GA MŠMT LC510; GA ČR GA202/09/0676
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: low dimensional structures * photoluminescence * electroluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.726, rok: 2011

    We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs0.87Sb0.13 SRL (type I heterojunction).
    Trvalý link: http://hdl.handle.net/11104/0204912

     
     
Počet záznamů: 1  

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