Controlling of MOVPE InAs/GaAs quantum dot properties for device application

0371049 - FZÚ 2012 CZ eng A - Abstrakt
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Ziková, M. - Vyskočil, Jan - Oswald, Jiří - Kuldová, Karla
Controlling of MOVPE InAs/GaAs quantum dot properties for device application.
NANOCON 2011. Conference Proceedings. Ostrava: Tanger Ltd, 2011. s. 23. ISBN 978-80-87294-23-9.
[NANOCON 2011. International Conference /3./. 21.09.2011-23.09.2011, Brno]
Grant CEP: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA ČR GA202/09/0676
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: InAs/GaAs quantum dots * M0VPE
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Self-assembled InAs/GaAs quantum dots (QDs) are intensively investigated due to their fundamental optical properties and great potential device applications – in high performance semiconductor lasers, LEDs, memories, and detectors. QD properties can be significantly influenced by the QD material choice, growth conditions of QD structure, size and surface density of QDs, QD shape and internal strain. The QD material, strain and mainly their size can determine emitted wavelength. The shape can influence the difference between the ground and the first excited electron state. When overgrowing with InGaAs the shape is prolonged in one direction. When overgrowing with GaAsSb the shape remains circular. The ternary Strain Reducing Layer (SRL) also prevents dissolution of the QDs. Overgrowth with SRL (InGaAs, GaAsSb), which causes narrowing of the forbidden energy gap in QDs and resulting in redshift of the Photoluminescence (PL) maximum, can also reduce the strain.
Trvalý link: http://hdl.handle.net/11104/0204684