Study of the Surface-Modifying Techniques for Localized Erbium Doping into Various Cuts of Lithium Niobate

0367677 - ÚJF 2012 US eng C - Konferenční příspěvek (zahraniční konf.)
Nekvindová, P. - Švecová, B. - Cajzl, J. - Macková, Anna - Malinský, Petr - Vacík, Jiří - Oswald, Jiří - Kolitsch, A. - Špirková, J.
Study of the Surface-Modifying Techniques for Localized Erbium Doping into Various Cuts of Lithium Niobate.
[Study of the Surface-Modifying Techniques for Localized Erbium Doping into Various Cuts of Lithium Niobate.]
Books of abstracts. Columbus, Ohio: Materials Science & Technology 2011 Conference, 2011.
[Materials Science & Technology 2011 Conference. Columbus, Ohio (US), 16.10.2011-20.10.2011]
Výzkumný záměr: CEZ:AV0Z10480505
Klíčová slova: lithium niobate * erbium * RBS-channeling * NDP * photoluminescence
Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače

Results of localized doping of erbium into lithium niobate, mainly ion implantation and diffusion from the melted erbium salt, are presented. The samples were characterized by Rutherford backscattering spectroscopy for erbium concentration depth profiles and by photoluminescence spectroscopy for the emission around 1530 nm. The samples revealed thin erbium doped layers differing in both erbium distribution and luminescence intensity. The II samples contained about 1at.% of erbium and the measurable luminescence appeared only after the post-implantation annealing. In TD prepared samples the erbium concentrations were always higher (7-24 at.%) comparing with the II samples, and the luminescence appeared without the post-diffusion annealing. Using a combination of RBS/channeling, Neutron Depth Profiling and X-ray diffraction methods we studied the influence of erbium amount and its position in the LN structure on the luminescence properties.

Results of localized doping of erbium into lithium niobate, mainly ion implantation and diffusion from the melted erbium salt, are presented. The samples were characterized by Rutherford backscattering spectroscopy for erbium concentration depth profiles and by photoluminescence spectroscopy for the emission around 1530 nm. The samples revealed thin erbium doped layers differing in both erbium distribution and luminescence intensity. The II samples contained about 1at.% of erbium and the measurable luminescence appeared only after the post-implantation annealing. In TD prepared samples the erbium concentrations were always higher (7-24 at.%) comparing with the II samples, and the luminescence appeared without the post-diffusion annealing. Using a combination of RBS/channeling, Neutron Depth Profiling and X-ray diffraction methods we studied the influence of erbium amount and its position in the LN structure on the luminescence properties.
Trvalý link: http://hdl.handle.net/11104/0202267