Comparative study on dry etching of polycrystalline diamond thin films in different plasma systems

0359628 - FZÚ 2012 CZ eng A - Abstrakt
Ižák, Tibor - Kromka, Alexander - Babchenko, Oleg - Ledinský, Martin - Hruška, Karel - Verveniotis, Elisseos
Comparative study on dry etching of polycrystalline diamond thin films in different plasma systems.
13th Joint Vacuum Conference - Programme and book of abstract. Brno: Tribun EU s.r.o., 2010 - (Vesely, M.; Vincze, A.; Vavra, I.). s. 73. ISBN 978-80-7399-969-8.
[Joint Vacuum Conference /13./. 20.06.2010-24.06.2010, Strbske Pleso]
Grant CEP: GA AV ČR KAN400100701; GA AV ČR(CZ) IAAX00100902; GA MŠMT LC510; GA AV ČR(CZ) KAN400480701; GA AV ČR KAN400100652
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: polycrystalline diamond * capacitively coupled plasma * reactive ion etching * nanostructuring
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The reactive ion etching technique was used to etch polycrystalline diamond thin films. In the first concept we investigate the influence of process parameters (total pressure, rf power, gas composition) of standard capacitively coupled plasma (CCP) system (Phantom III, Trion Technology) on the etching rate of diamond films. In the second concept, we focus on using a linear-antenna microwave plasma system (AK400, Roth&Rau) for diamond etching. We found that the gas composition in the CCP plasma system had a crucial effect on the film morphology. Using of CF4 gas resulted in more flat surfaces and lateral-like etching, while using of pure O2 gas formed needle-like structures. Adding of argon to the reactant precursors increased the ion bombardment, which increased the formation of non-diamond phases,etc.
Trvalý link: http://hdl.handle.net/11104/0197378