Metal nanoparticle films deposited by electrophoresis on semiconductor III-V-N compounds

0356273 - ÚFE 2011 FR eng C - Konferenční příspěvek (zahraniční konf.)
Žďánský, Karel - Yatskiv, Roman - Zavadil, Jiří - Kostka, František - Grym, Jan - Nohavica, Dušan - Vaniš, Jan - Lorinčík, Jan
Metal nanoparticle films deposited by electrophoresis on semiconductor III-V-N compounds.
E-MRS 2010, Spring Meeting. Strasbourg: E-MRS Headquarters, 2010, G2-G7.
[E-MRS Spring Meeting. STRASBOURG (FR), 07.06.2010-11.06.2010]
Grant CEP: GA MŠMT(CZ) OC10021; GA AV ČR(CZ) KAN401220801
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor devices * nanostructures * sensors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Study of metal nanoparticle films deposited on dilute nitride-InP layers from colloid solutions is reported. Preparation of dilute nitride-InP was endeavoured by LPE growing of InP with admixture of InN and by N implantation to InP. Colloid solutions were prepared from water solutions of metal compounds and hydrazine. Samples with deposited Pd or Ag nanoparticles were characterised by AFM, SEM, SIMS, reflection, PL and Raman spectroscopy. Samples were sensitive to hydrogen in the case of Pd nanoparticles.
Trvalý link: http://hdl.handle.net/11104/0194837