Conductive atomic force microscopy on hydrogenated microcrystalline silicon and polycrystalline silicon thin films for solar cells

0356023 - FZÚ 2011 JP eng C - Konferenční příspěvek (zahraniční konf.)
Vetushka, Aliaksi - Fejfar, Antonín - Ledinský, Martin - Stuchlík, Jiří - Kočka, Jan
Conductive atomic force microscopy on hydrogenated microcrystalline silicon and polycrystalline silicon thin films for solar cells.
Proceedings of The Third International Forum on Multidisciplinary Education and Research for Energy Science. Tokyo: Tokyo Institute of Technology Global COE Program, 2010 - (Hirai, S.; Maruyama, T.), s. 23-24. ISBN N.
[International Forum on Multidisciplinary Education and Research for Energy Science /3./. Ishigaki, Okinawa (JP), 09.12.2010-14.12.2010]
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510; GA ČR GD202/09/H041; GA MŠMT(CZ) MEB061012; GA AV ČR(CZ) IAA100100902
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: thin films of polycrystalline silicon * microcrystalline silicon
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Local electrical properties of thin films of polycrystalline silicon and hydrogenated microcrystalline silicon (μc-Si:H) were studied by conductive atomic force microscopy (C-AFM) in ambient and UHV conditions. Compared to UHV, the measurement of the local conductivity in ambient atmosphere is complicated by the presence of water layer and highly resistive thin native oxide layer on the sample surface. We demonstrated how the neighbor line preoxidation artifact (occurring in the presence of the layers of native oxide and condensed water) can change the character of the local current maps even in the first scan of a pristine surface of various materials used in solar cells. We report our last results of C-AFM on polycrystalline and μc-Si:H samples, describe the measurement of local I-V characteristics and compare the measurements at different settings and conditions.
Trvalý link: http://hdl.handle.net/11104/0194653