Počet záznamů: 1
The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition
- 1.0352722 - FZÚ 2011 RIV GB eng J - Článek v odborném periodiku
Červenka, Jiří - Ledinský, Martin - Stuchlík, Jiří - Stuchlíková, The-Ha - Bakardjieva, Snejana - Hruška, Karel - Fejfar, Antonín - Kočka, Jan
The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition.
Nanotechnology. Roč. 21, č. 41 (2010), 415604/1-415604/7. ISSN 0957-4484. E-ISSN 1361-6528
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521; CEZ:AV0Z40320502
Klíčová slova: nanoneedles * nanowires * silicon * plasma * chemical vapor deposition * crystal structure * growth * phonon * SEM * Raman
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.644, rok: 2010
Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 °C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H2 dilution of the SiH4 plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end.
Trvalý link: http://hdl.handle.net/11104/0192169
Počet záznamů: 1