Development of EOD for the design in electron and ion microscopy

0352426 - ÚPT 2011 SG eng A - Abstrakt
Zlámal, J. - Lencová, Bohumila
Development of EOD for the design in electron and ion microscopy.
Eighth International Conference on Charged Particle Optics CPO-8. Singapore: National University of Singapore, 2010. s. 73-74.
[CPO /8./ International Conference on Charged Particle Optics. 12.07.2010-16.07.2010, Singapore]
Grant CEP: GA AV ČR IAA100650805
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: EOD * electron microscopy * ion microscopy
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The EOD program was first introduced in 2000 at EUREM conference in Brno and discussed at a number of conferences in Europe; the most extensive description is in CPO-7 proceedings. 10 years are for a program an adult age worth summarizing, looking back and outlining the new direction of development. The field computation is based on the well-proven first order Finite Element Method (FEM) for both rotationally symmetric electrostatic and magnetic lenses and for multipole components of electrostatic m-poles and magnetic deflection coils. The main reason for staying with the linear elements is that the solution of the resulting equations for potential is fast (1 million points close to 2 minutes), and the coarse and fine meshes in EOD can have very large number of mesh lines. It is also simple to generate the fine mesh with a graded mesh step automatically from one or more gaps with user specified mesh density.
Trvalý link: http://hdl.handle.net/11104/0191933