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InGaAsP/InP infrared light emitting diodes prepared by liquid phase epitaxy from rare-earth treated melt
- 1.0346227 - ÚFE 2011 PL eng C - Konferenční příspěvek (zahraniční konf.)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
InGaAsP/InP infrared light emitting diodes prepared by liquid phase epitaxy from rare-earth treated melt.
XXXVIII International School and Conference on the Physics of Semiconductors, ”Jaszowiec” 2009. Krynica-Zdroj: Polish Academy of Sciences, Institute of Physics, 2009, s. 129-129.
[XXXVIII International School and Conference on the Physics of Semiconductors, ”Jaszowiec” 2009. Krynica-Zdroj (PL), 19.06.2009-26.06.2009]
Grant CEP: GA ČR GA102/09/1037; GA ČR(CZ) GP102/08/P617
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor technology * Rare-earth elements * III-V semiconductors
Kód oboru RIV: JJ - Ostatní materiály
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III–V semiconductors due to REs high affinity toward shallow impurities.We demonstrate this purifying effect on the preparation of InGaAsP layers and InGaAsP/InP double heterostructure LEDs by liquid phase epitaxy with Pr admixture to the growth melt.
Trvalý link: http://hdl.handle.net/11104/0187303
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