Low-temperature photoluminescence of indium phoshide enhanced by deposition of metal nanoparticles

0346195 - ÚFE 2011 IL eng C - Konferenční příspěvek (zahraniční konf.)
Žďánský, Karel - Zavadil, Jiří - Fojtík, A.
Low-temperature photoluminescence of indium phoshide enhanced by deposition of metal nanoparticles.
NanoIsrael 2009. Jeruzalem: KENES International, 2009 - (Vilenski,, D.), s. 1-1
[The International Nanotechnology Conference, 'NanoIsrael 2009’. Jeruzalem (IL), 30.03.2009-31.03.2009]
Grant CEP: GA AV ČR(CZ) KAN401220801
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor devices * nanostructures
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
http://www.kenes.com/nano

Thin films of metal nanoparticles deposited by electrophoresis onto surfaces of InP from colloid solutions were studied. Photoluminescence (PL) spectra emitted from the uncovered surface of InP and from the surface covered with i) Pd- and ii) Ag-nanoparticles were measured at 4 K and compared with measurements at 77 K and 300 K. At low temperatures and not at 300 K, the PL intensity was enhanced by the layers. We sugested that the PL enhancement was caused by collective plasmon modes of metal nanoparticles.
Trvalý link: http://hdl.handle.net/11104/0187282