Growth of InP crystals for radiation detectors and other application

0346109 - ÚFE 2011 CZ eng K - Konferenční příspěvek (tuzemská konf.)
Pekárek, Ladislav - Yatskiv, Roman
Growth of InP crystals for radiation detectors and other application.
Proceedings of the 18th Joint seminar Development of materials science in research and education. Praha: Czechoslovak association for crystal growth, 2008 - (Nitsch, K.; Rodová, M.), s. 74-75. ISBN 978-80-254-0864-3.
[Development of Materials Science in Research and Education, Joint Seminar 2008 /18./. Hnanice (CZ), 02.09.2008-05.09.2008]
Grant CEP: GA AV ČR KAN400670651; GA ČR GA102/06/0153
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: crystal growth * radiation detector * InP
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Bulk InP single crystals were grown by Czochralski method. Various dopants were added to the melt to obtain single crystals suitable for radiation detectors and other application. The intentionally doped of InP crystals were characterized by measurements of resistivity and Hall coefficient. Prototype detectors were prepared and evaluated by spectral detection of alpha particles and x-rays.
Trvalý link: http://hdl.handle.net/11104/0187217