Počet záznamů: 1
Influence of Yb AND Yb2O3 addition on the properties of InP layers
- 1.0341490 - ÚFE 2011 RIV RO eng J - Článek v odborném periodiku
Procházková, Olga - Grym, Jan - Zavadil, Jiří - Žďánský, Karel - Lorinčík, Jan
Influence of Yb AND Yb2O3 addition on the properties of InP layers.
Journal of Optoelectronics and Advanced Materials. Roč. 10, č. 12 (2008), s. 3261-3264. ISSN 1454-4164. E-ISSN 1841-7132
Grant CEP: GA ČR GA102/06/0153; GA ČR(CZ) GP102/08/P617
Výzkumný záměr: CEZ:AV0Z20670512
Klíčová slova: semiconductor technology * rare earth elements * InP
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 0.577, rok: 2008
The influence of Yb and Yb2O3 additions into the LPE growth melt on the properties of InP epitaxial layers is reported. We have concentrated on the investigation of gettering and/or doping effects. Efficient gettering was confirmed for both Yb and Yb2O3 addition, the incorporation of Yb3+ into the InP lattice was confirmed only for Yb addition. Layers grown with Yb addition exhibited n -> p conductivity conversion at certain Yb concentration. Dominant acceptor, responsible for n -> p conductivity conversion was identified as the isoelectronic Yb impurity on the In site. Layers grown with Yb2O3 admixture always show n-type electrical conductivity.
Trvalý link: http://hdl.handle.net/11104/0005810
Počet záznamů: 1