Probing charge transport in hydrogenated micro-crystalline silicon thin films with nanometer resolution

0338215 - FZÚ 2010 RIV LU eng A - Abstrakt
Vetushka, Aliaksi - Fejfar, Antonín - Ledinský, Martin - Rezek, Bohuslav - Stuchlík, Jiří - Kočka, Jan
Probing charge transport in hydrogenated micro-crystalline silicon thin films with nanometer resolution.
[Měření transportu náboje v tenkých vrstvách hydrogenovaného mikrokrystalického křemíku s nanometrovým rozlišením.]
EuroNanoForum 2009 - Nanotechnology for Sustainable Economy. Luxembourg: Office for Official Publications of the European Communities, 2009 - (Fantechi, S.; Havlíčková, L.; Svobodová, E.; Fryček, R.; Albrecht, V.). s. 109. ISBN 978-92-79-11109-9.
[EuroNanoForum 2009. 02.06.2009-05.06.2009, Prague]
Grant CEP: GA ČR GD202/09/H041; GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: charge transport * silicon thin films * conductive atomic force microscopy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

We present long-term effort to characterize both the structure and local electronic properties of μc-Si:H thin films by the nanometer resolved measurements of local conductivity using a tip of atomic force microscope (AFM). Conductive AFM can measure simultaneously and independently topography and local conductivity of the sample with resolution down to few nanometers and so it can be used to address the existing controversy about what is the dominant route of electronic transport in these films. However, the C-AFM technique itself is influenced by surface oxide, either native or created in the process of measurement by local anodic oxidation (LAO). Our experiments allowed us to understand the effect of oxide on the observed maps of conductivity. We describe the origin of the oxide-related artifacts and also a procedure how to avoid them. Based on these experiments we offer the model of charge transport, which is also supported by results from many other experimental techniques.

V příspěvku prezentujeme výsledky našeho dlouhodobého úsili o charakterizaci struktury a lokálních elektronických vlastností tenkých vrstev mikrokrystalického křemíku s nanometrovým rozlišením pomocí vodivého hrotu mikroskopu atomárních sil.
Trvalý link: http://hdl.handle.net/11104/0182052