Scanning low energy electron microscopy of doped silicon at units of eV

0335882 - ÚPT 2011 IT eng A - Abstrakt
Hovorka, Miloš - Mikmeková, Šárka - Frank, Luděk
Scanning low energy electron microscopy of doped silicon at units of eV.
6th International Workshop on LEEM/PEEM. Trieste: ELETTRA, 2008. s. 110. ISBN N.
[International Workshop on LEEM/PEEM /6./. 07.09.2008-11.09.2008, Trieste]
Grant CEP: GA AV ČR IAA100650803
Výzkumný záměr: CEZ:AV0Z20650511
Klíčová slova: very low energy electron microscopy * scanning low energy electron microscope
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Very low energy electron microscopy with the primary beam of hundreds of eV has proven very useful when imaging doped areas in semiconductors at high lateral resolution and high sensitivity to the dopant concentration. We employed the scanning low energy electron microscope equipped with the cathode lens in imaging of doped silicon samples at the landing energy of few eV.
Trvalý link: http://hdl.handle.net/11104/0180232