Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

0314836 - FZÚ 2009 RIV DE eng J - Článek v odborném periodiku
Giddings, A.D. - Makarovsky, O. N. - Khalid, M.N. - Yasin, S. - Edmonds, K. W. - Campion, R. P. - Wunderlich, J. - Jungwirth, Tomáš - Williams, D.A. - Gallagher, B. L. - Foxon, C. T.
Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
[Silná tunelovací anisotropní magnetorezistance v (Ga,Mn)As nano-konstrikcích.]
New Journal of Physics. Roč. 10, č. 8 (2008), 085004/1-085004/9. ISSN 1367-2630. E-ISSN 1367-2630
Grant CEP: GA ČR GEFON/06/E002; GA MŠMT LC510; GA ČR GA202/05/0575; GA ČR GA202/04/1519
GRANT EU: European Commission(XE) 015728 - NANOSPIN
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: ferromagnetic semiconductor * nanoconstriction * tunneling anisotropic magnetoresistance,
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.440, rok: 2008

We report here large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstrictions of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism.

Silná tunelovací anisotropní magnetorezistance v (Ga,Mn)As nano-konstrikcích je studována experimenálně a diskutována teoreticky
Trvalý link: http://hdl.handle.net/11104/0165220