Physical properties of InP epitaxial layers prepared with dysprosium admixture

0304157 - URE-Y 20030070 RIV CZ eng K - Konferenční příspěvek (tuzemská konf.)
Grym, Jan - Procházková, Olga
Physical properties of InP epitaxial layers prepared with dysprosium admixture.
Prague: Czech Technical University, 2003. CTU Reports., 7, 2003 Sp. Issue. ISBN 80-01-02708-2. In: Proceedings of Workshop 2003., s. 550-551
[Workshop 2003. Annual University-Wide Seminar /10./. Prague (CZ), 10.02.2003-12.02.2003 (W)]
Grant CEP: GA AV ČR KSK1010104 Projekt 04/01:4043; GA ČR GA102/03/0379
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: rare earth elements * liquid phase epitaxial growth * III-V semiconductors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Physical properties of commonly prepared InP layers grown by LPE technique and those grown from Dy treated melt are compared. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presence of Dy and its concentration in the melt. When increasing the concentration of Dy the reversal of electrical conductivity occurs.
Trvalý link: http://hdl.handle.net/11104/0114298