Feedback mechanism implicit in the LPE growth of semiconductor layers

0304156 - URE-Y 20030050 PL eng A - Abstrakt
Šrobár, Fedor - Procházková, Olga
Feedback mechanism implicit in the LPE growth of semiconductor layers.
Warsaw: Zaklad Graficzny UW, 2003. XXXII International School on the Physics of Semiconducting Compounds Jaszowiec 2003. Program & Abstracts. s. 144
[International School on the Physics of Semiconducting Compounds Jaszowiec /32./. 30.05.2003-06.06.2003, Jaszowiec]
Grant CEP: GA ČR GA102/03/0379; GA AV ČR KSK1010104 Projekt 04/01:4043
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductors * epitaxial growth
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Applicability of the Burton-Cabrera-Frank model of crystal growth in the case LPE method is restricted due to the fact that volume diffusion in the melt imposes significant limitations to the growth process. To account for this, we take the supersaturation variable diminished by a growth rate-dependent quantity. Problem is solved by a diagrammatic method, the representative diagram contains a feedback loop. Model equations are evaluated, role of causal feedback in the growth kinetics is discussed.
Trvalý link: http://hdl.handle.net/11104/0114297