Role of liquid phase epitaxy in preparation of semiconductor materials for radiation detectors

0304080 - URE-Y 20020135 CZ eng A - Abstrakt
Grym, Jan - Procházková, Olga
Role of liquid phase epitaxy in preparation of semiconductor materials for radiation detectors.
Prague: Czech Technical University, 2002. Poster 2002. Book of Exteded Abstracts. s. PE13.1-PE13.2
[International Student Conference on Electrical Engineering Poster 2002 /6./. 23.05.2002-23.05.2002, Prague]
Grant CEP: GA AV ČR KSK1010104 Projekt 04/01:4043; GA MŠMT 300106513
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: rare earth elements * liquid phase epitaxial growth * III-V semiconductors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

InP-based semiconductor materials belong to promising candidates for the application in ionising radiation detectors. To take advantage of the suitable properties of InP, it is necesary to prepare high quality detector structures. LPE technique with rare-earth elements in the growth melt is discussed. Propeties of commonly prepared InP layers and those grown from Tb treated melt are compared.
Trvalý link: http://hdl.handle.net/11104/0114224