Modification of propertis of InP-based semiconductor materials by REE

0303982 - URE-Y 20020008 PL eng A - Abstrakt
Grym, Jan - Procházková, Olga
Modification of propertis of InP-based semiconductor materials by REE.
Warsaw: Zaklad Graficzny UW, 2002. XXXI International School on the Physics of Semiconducting Compounds Jaszowiec 2002. Program & Abstracts. s. 63
[International School on the Physics of Semiconducting Compounds Jaszowiec /31./. 07.06.2002-14.06.2002, Jaszowiec]
Grant CEP: GA AV ČR KSK1010104 Projekt 04/01:4043
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductor materials * rare earth elements * epitaxial growth * liquid phase epitaxial growth * III-V semiconductors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

The main goal was to obtaine InP layers with low density of defects. Promising preparation technique is modification of Epitaxial Lateral Overgrowth /ELO/ by using Rare Earth Element /REE/ in the growth melt. Obtained results show that especially Nd can suppress vertical growth rare that is to high in comparison with the lateral one and at some time decrease the shallow impurity concentration in InP by up three orders of magnitude.
Trvalý link: http://hdl.handle.net/11104/0114126