P-type InP grown by LPE from melts with rare earth admixtures

0303947 - URE-Y 20020080 RIV CH eng J - Článek v odborném periodiku
Žďánský, Karel - Procházková, Olga - Zavadil, Jiří - Novotný, Jan
P-type InP grown by LPE from melts with rare earth admixtures.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. B91-92, - (2002), s. 38-42. ISSN 0921-5107. E-ISSN 1873-4944.
[DRIP /9./. Rimini, 24.09.2001-28.09.2001]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010104 Projekt 04/01:4044
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: luminescence * rare earth compounds * Hall effect * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

InP single crystal layers were grown by LPE on semi-insulating InP with various rare earth elements added to the melt. The layers were characterized by temperature dependent Hall measurements and by low temperature photo-luminescence spectroscopy. P-type InP grown with Tb and Yb admixture was studied. The dominant acceptor in the case of Tb was identified as Mn on the In site. In the case of Yb the dominant acceptor was identified as isoelectronic Yb in In site with strong electron-lattice interaction.
Trvalý link: http://hdl.handle.net/11104/0114091