Preparation of InP-based semiconductor materials with low density of defects: effect of Nd, Tb and Yb addition

0303943 - URE-Y 20020081 RIV CH eng J - Článek v odborném periodiku
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel - Grym, Jan
Preparation of InP-based semiconductor materials with low density of defects: effect of Nd, Tb and Yb addition.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. B91/92, - (2002), s. 407-411. ISSN 0921-5107. E-ISSN 1873-4944.
[DRIP /9./. Rimini, 24.09.2001-28.09.2001]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth metals * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Specific features of some Rare Earth Elements (REE= Nd, Ho or Tb) are exploited to improve structural, optical and electrical properties of InP-based layer compounds for applications in ionizing radiation detector structures. InP layers were grown by Liquid Phase Epitaxy on (100)-oriented single crystal InP substrates with individual REE addition to the melt. The density of structural defects was reduced by more than a half order of magnitude, free carrier concentration was reduced effectively by up to four orders of magnitude, photoluminescence peaks were substantially narrowed and fine spectral features were resolved.
Trvalý link: http://hdl.handle.net/11104/0114087