Role of rare earth elements in growth process of InP LPE layers

0303869 - URE-Y 20010050 CZ eng A - Abstrakt
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of rare earth elements in growth process of InP LPE layers.
Prague: Czech Technical University, 2001. Poster 2001. Book of Extended Abstract. s. NS16.1-NS16.2
[International Student Conference on Electrical Engineering /5./. 24.05.2001, Prague]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

Rare earth elements (REE) addition to the growth melt during the InP LPE growth process leads to gettering of shallow impurities and is considerably effected by REE concentrations. As a consequence, concentration of shallow donors was decreased by up to three orders of magnitude and PL spectra were markedly narrowed. The dislocation density was reduced by a half order of magnitude. Yb ions were incorporated into the InP host lattice.
Trvalý link: http://hdl.handle.net/11104/0114053