Growth of InP layers for radiation detectors

0303826 - URE-Y 20010040 SK eng A - Abstrakt
Zavadil, Jiří - Procházková, Olga - Žďánský, Karel
Growth of InP layers for radiation detectors.
[Bratislava]: [STU], 2001. ISBN 80-85330-90-3. DMS-RE 2001 Development of Materials Science in Research and Education. - (Koman, M.; Mikloš, D.). s. 94-95
[Development of Materials Science in Research and Education - DMS-RE 2001 /11./. 09.09.2001-13.09.2001, Kežmarské Žĺaby]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: particle detectors * semiconductor materials * III-V semiconductors * photoluminescence
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

The effect of rare-earth (RE) elements addition (Er, Ho, Nd, Pr, Tb and Yb) during the liquid phase epitaxy (LPE) on the growth process and structural, electrical and optical properties of thick InP epitaxial layers for applications in ionizing radiation detector structures, is reported. The grown layers were examined by low-temperature photoluminescence spectroscopy and temperature-dependent Hall effect. From among the studied RE elements Pr and Tb appear as the most promising candidates.
Trvalý link: http://hdl.handle.net/11104/0114010