Novel approaches to LPE preparation of InP-based semiconductor layers

0303825 - URE-Y 20010051 SK eng A - Abstrakt
Grym, Jan - Procházková, Olga - Žďánský, Karel - Zavadil, Jiří
Novel approaches to LPE preparation of InP-based semiconductor layers.
[Bratislava]: [STU], 2001. ISBN 80-85330-90-3. DMS-RE 2001 Development of Materials Science in Research and Education. - (Koman, M.; Mikloš, D.). s. 41-42
[Development of Materials Science in Research and Education - DMS-RE 2001 /11./. 09.09.2001-13.09.2001, Kežmarské Žĺaby]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

InP-based semiconductor materials belong to promising candidates for the application in ionising radiation detectors. To take advantage of the suitable properties of InP, it is necessary to prepare high quality detector structures. Attention was paid to several modifications of LPE technique that allow us to grow structurally perfect layers with a low density of dislocations - Epitaxial layer overgrowth, Remelt liquid phase epitaxy, LPE with rare-earth elements in the growth melt.
Trvalý link: http://hdl.handle.net/11104/0114009