Role of ç-elements in the growth of InP layers for radiation detectors

0303822 - URE-Y 20010078 PL eng A - Abstrakt
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of ç-elements in the growth of InP layers for radiation detectors.
[Poznan]: [Faculty of Technological Physics Poznan University of Technology], 2001. VI Polish Conference on Crystal Growth - PCCG-VI. s. 37
[Polish Conference on Crystal Growth /PCCG-6./. 20.05.2001-23.05.2001, Poznan]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth metals * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

We report the effect of ç-elements (Er, Ho, Nd, Pr, Tb and Yb) during the LPE on the growth process and structural, electrical and optical properties of InP thick epitaxial layers for applications in ionizing radiation detector structures. Room temperature Hall effect measurements revealed p-type conductivity Tb, Pr or Yb admixture exceeding certain limiting concentration. These layers could readily be used for the preparation of ŕ-particles detector, when detection will be mediated via the depletion layer of high quality Schottky contact.
Trvalý link: http://hdl.handle.net/11104/0114006