0303799 - URE-Y 20010077 RIV DE eng J - Článek v odborném periodiku
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of ç-elements in the growth of InP layers for radiation detectors.
Crystal Research and Technology. Roč. 36, 8/10 (2001), s. 979-987. ISSN 0232-1300. E-ISSN 1521-4079.
[Polish Conference on Crystal Growth /PCCG 6./. Poznan, 20.05.2001-23.05.2001]
Grant CEP: GA ČR GA102/99/0341; GA AV ČR KSK1010104 Projekt 04/01:4043
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: liquid phase epitaxial growth * rare earth metals * semiconductor materials
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 0.536, rok: 2001

We report the effect of ç-elements (Er, Ho, Nd, Pr, Tb and Yb) during the LPE on the growth process and structural, electrical and optical properties of InP thick epitaxial layers for applications in ionizing radiation detector structures. Room temperature Hall effect measurements revealed p-type conductivity Tb, Pr or Yb admixture exceeding certain limiting concentration. These layers could readily be used for the preparation of ŕ-particles detector, when detection will be mediated via the depletion layer of high quality Schottky contact.
Trvalý link: http://hdl.handle.net/11104/0113983