LPE InP layers grown in the presence of rare-earth elements

0303747 - URE-Y 20000134 GR eng I - Interní tisk
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE InP layers grown in the presence of rare-earth elements.
Heraklion: FORTH, 2000. 1 s. EXMATEC 2000 - 5th International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies. Book of Abstract. s. P-057
Grant CEP: GA ČR GA102/99/0341
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: semiconductor materials * rare earth elements
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

InP epitaxial layers were grown by LPE on (100) oriented InP:Sn and InP:Fe substrates from the melts containing rare earth elements admixture. We report the influence of Nd, Pr and Yb addition during the LPE growth on electro-optical properties of InP layers. Temperature depended Hall effect and capacitance-voltage curves show quite dramatic impact of Pr and Nd on shallow impurities and free-carrier concentrations: they were decreased by as much as three orders of magnitude.
Trvalý link: http://hdl.handle.net/11104/0113934