InP-based epitaxial layers grown from rare earths-containing melts: technology and physical properties

0303665 - URE-Y 20000047 PL eng A - Abstrakt
Procházková, Olga - Šrobár, Fedor - Zavadil, Jiří
InP-based epitaxial layers grown from rare earths-containing melts: technology and physical properties.
Warsaw: Institute of Physics Polish Academy of Sciences, 2000. XXIX International School on the Physics of Semiconducting Compounds. Program & Abstracts. s. 34
[Physics of Semiconducting Compounds /29./. 02.06.2000-09.06.2000, Jaszowiec]
Grant CEP: GA ČR GA102/99/0341
Výzkumný záměr: CEZ:AV0Z2067918
Klíčová slova: epitaxial layers * semiconductors * rare earth compounds
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika

We report the preparation and properties of InP layers prepared by the LPE process from the melts containing selected REs (namely Nd,Pr,Ho,Yb and Er). Only Yb has been reported to incorporate into the InP host lattice and yields observable emission features in the photoluminescence spectra. Nevertheless their presence in the preparation process was shown to improve quite remarkably optical and transport properties of LPE III-V layers due to their gettering effect.
Trvalý link: http://hdl.handle.net/11104/0113853