Imaging of the boron doping in silicon using low energy SEM

0205568 - UPT-D 20020118 RIV NL eng J - Článek v odborném periodiku
Müllerová, Ilona - El-Gomati, M. - Frank, Luděk
Imaging of the boron doping in silicon using low energy SEM.
Ultramicroscopy. Roč. 93, 3/4 (2002), s. 223 - 243. ISSN 0304-3991. E-ISSN 1879-2723
Grant CEP: GA AV ČR IAA1065901; GA AV ČR IBS2065017
Výzkumný záměr: CEZ:AV0Z2065902
Klíčová slova: electron and ion microscopes * semiconductor doping
Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
Impakt faktor: 1.772, rok: 2002

Scanning electron imaging of plan views of boron-doped patterns in silicon is examined, together with the mechanism of formation of the electronic contrast in this kind of structures. Main to-date published results are critically reviewed and new data are presented concerning the secondary, backscattered and total-emission electron contrasts, including their qualitative and quantitative behaviour, particularly in the low energy range achieved with the help of the cathode lens (the scanning low energy electron microscopy mode, SLEEM).
Trvalý link: http://hdl.handle.net/11104/0101181